2SD1481

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid relay printer head drivers PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 60 ±10 60 ±10 7.0 2.0 4.0 0.2 15 1.5 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 300 µs, duty cycle ≤ 10% (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU  )LQ FROOHFWRU The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16189EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD1481 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC ...