WSF2816-39XX

www.DataSheet4U.com White Electronic Designs 128KX16 SRAM/512KX16 FLASH MODULE FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) Packaging 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880") square (Package 510) 3.56mm (0.140") height. Designed to fit JEDEC 68 lead 0.990” CQFJ footprint (FIGURE 2) 128Kx16 SRAM 512Kx16 5V FLASH Organized as 128Kx16 of SRAM and 512Kx16 of Flash Memory with separate Data Buses Both blocks of memory are User Configurable as 256Kx8 Low Power CMOS Commercial, Industrial and Military Temperature Ranges TTL Compatible Inputs and Outputs WSF2816-39XX Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight: WSF2816-39G2UX - 8 grams typical WSF2816-39H1X - 13 grams typical FLASH MEMORY FEATURES 100,000 Erase/Program Cycles Sector Architecture 8 equal size sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase 5 Volt Programming; 5V ± 10% Supply Embedded Erase and Program Algorithms Hardware Write Protection Note: For programming information refer to Flash Programming 4M5 Application Note. FIGURE1 – PIN CONFIGURATION FOR WSF2816-39H1X Top View 1 SD8 SD9 SD10 A13 A14 A15 A16 A18 SD0 SD1 SD2 11 22 12 SWE2# SCS2# GND SD11 A10 A11 A12 VCC SCS1# NC SD3 33 23 SD15 SD14 SD13 SD12 OE# A17 SWE1# SD7 SD6 SD5 SD4 FD8 FD9 FD10 A6 A7 NC A8 A9 FD0 FD1 FD2 44 34 VCC FCS2# FWE2# FD11 A3 A4 A5 FWE1# FCS1# GND FD...