IRS2111SPBF

www.DataSheet4U.com Data Sheet No. PD60253 IRS2111(S)PbF HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt Gate drive supply range from 10 V to 20 V Undervoltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set deadtime High side output in phase with input immune Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600 V max. 200 mA / 420 mA 10 V - 20 V 750 ns & 150 ns 650 ns Description The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Packages 8-Lead PDIP IRS2111PbF 8-Lead SOIC IRS21111SPbF Typical Connection up to 600 V VCC VCC IN VB HO VS TO LOAD IN COM LO (Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer...