SI6866DQ

www.DataSheet4U.com Si6866DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES ID (A) "5.8 "5.0 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant Available D1 D2 TSSOP-8 S1 G1 S2 G2 1 2 3 4 Top View D 8 D 7 D 6 D 5 D G1 G2 Si6866DQ S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si6866DQ-T1 Si6866DQ-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 "5.8 "4.7 "30 1.5 1.67 1.06 Steady State Unit V "5.0 "4.0 A 1.1 1.2 0.76 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71102 S-50695—Rev. B, 18-Apr-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 60 86 38 Maximum 75 105 45 Unit _C/W 1 Si6866DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain...