www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF6S9130H Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. Typical Single - ...
