FDFS2P753Z

FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode November 2006 FDFS2P753Z tm Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A „ Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A „ VF < 500mV @ 1A VF < 580mV @ 2A „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ RoHS Compliant The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Application „ DC - DC Conversion D D C C SO-8 Pin 1 G S A A D5 D6 C7 C8 4G 3S 2A 1A MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Pulse Avalanche Energy Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 2) (Note 1a) Ra...