SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE
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SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE
ISSUE 2 – JANUARY 1998 FEATURES * VHF to UHF operatio...
Description
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SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE
ISSUE 2 – JANUARY 1998 FEATURES * VHF to UHF operation * Common Cathode Dual Diode * Monolithic construction APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators PARTMARKING DETAIL ZDC833A – C2A
PIN CONFIGURATION
1
ZDC833A
2
1 3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER Forward Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg VALUE 200 330 -55 to +150 UNIT mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). (Each Diode)
PARAMETER Reverse Breakdown Voltage Reverse Leakage Current Temperature Coefficient Diode Capacitance Capacitance Ratio Figure of Merit SYMBOL V BR MIN. 25 TYP. MAX. UNIT V CONDITIONS. I R = 10 µ A V R = 20V
IR η
0.2
10
nA
400
ppm/°C
V R = 3V, f=1MHz
Cd Cd / Cd Q
29.7 5.0 200
33
36.3 6.5
pF
V R = 2V, f=1MHz V R = 2V/20V, f=1MHz V R = 3V, f=50MHz
ZDC833A
TYPICAL CHARACTERISTICS
Temp. Coefficient (PPM/ °C)
100 1200
Tj = 25 to 125°C
Capacitance (pF)
800
10
400
1 0.1 1 10 100
0 0.1 1 10 100
VR - Reverse Voltage (V)
VR - Reverse Voltage (V)
Capacitance v Reverse Voltage
Temp. Coefficient v Reverse Voltage
...
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