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TPCA8016-H Dataheets PDF



Part Number TPCA8016-H
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description High-Speed and High-Efficiency DC-DC Converters
Datasheet TPCA8016-H DatasheetTPCA8016-H Datasheet (PDF)

www.DataSheet4U.com TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 5.0±0.2 Unit: mm 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 6.6 nC (typ.) Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admi.

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www.DataSheet4U.com TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications 6.0±0.3 0.5±0.1 8 1.27 5.0±0.2 Unit: mm 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 6.6 nC (typ.) Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 4.25±0.2 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 25 75 45 2.8 1.6 45 25 2.7 150 −55 to 150 Unit V V V A W W 8 5 1,2,3:SOURCE 5,6,7,8:DRAIN 0.8±0.1 JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) Circuit Configuration W mJ A mJ °C °C 1 2 3 4 8 7 6 5 Note: For Notes 1to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with caution. 1 2004-09-07 3.5±0.2 Maximum Ratings (Ta = 25°C) 0.6±0.1 4:GATE TPCA8016-H Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8016-H ※ Type Lot No. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture ( The last digit of the year) 2 2004-09-07 TPCA8016-H Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ − 48 V, VGS = 10 V, ID = 25 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rg tr ton VGS 10 V 0V 4.7 Ω ID = 13 A VOUT RL =2.3Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 13 A VDS = 10 V, ID = 13 A Min ⎯ ⎯ 60 45 1.1 ⎯ ⎯ 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 16 20 40 1375 70 340 1.0 4 10 3 19 22 12 4.6 4.2 6.6 Max ±10 10 ⎯ ⎯ 2.3 21 26 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Ω pF Unit µA µA V V mΩ S VDD ∼ − 30 V Duty < = 1%, tw = 10 µs VDD ∼ − 48 V, VGS = 10 V, ID = 25 A VDD ∼ − 48 V, VGS = 5 V, ID = 25 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 25 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 75 −1.2 Unit A V 3 2004-09-07 TPCA8016-H RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodil.


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