TPCA8014-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8014-H
High-Effic...
TPCA8014-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8014-H
High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1 1.27 0.4±0.1
8
5
Unit: mm
0.05 M A
6.0±0.3 5.0±0.2
Small footprint due to a small and thin package High-speed switching Small gate charge: Qsw = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0.6±0.1 3.5±0.2
Absolute Maximum Ratings (Ta = 25°C)
4.25±0.2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Rating
Unit
40
V
40
V
±20
V
30 A
90
45
W
2.8
W
1.6
W
84
mJ
30
A
2.7
mJ
150
°C
−55 to 150
°C
8
5 0.8±0.1
1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.068 g (typ.)
Circuit Configur...
