TPCA8006-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII)
TPCA8006-H
Switching Regulator Applica...
TPCA8006-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOSVII)
TPCA8006-H
Switching
Regulator Applications Motor Drive Applications DC／DC Converter Applications
0.5±0.1
Unit: mm
1.27 0.4±0.1
8
5
0.05 M A
6.0±0.3 5.0±0.2
Small footprint due to a small and thin package High speed switching Low drain-source ON-resistance
: RDS (ON) = 41 mΩ (typ.) (VG=10V, ID=9A) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
0.166±0.05
0.95±0.05
1
4
5.0±0.2
0.595 A
0.05 S
S
1
4
1.1±0.2
0.6±0.1
3.5±0.2
Absolute Maximum Ratings (Ta = 25°C)
4.25±0.2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Rating
Unit
100
V
100
V
±20
V
18 A
36
45
W
2.8
W
1.6
W
224
mJ
18
A
4.5
mJ
150
°C
−55 to 150
°C
8
5 0.8±0.1
1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer ...
