2SJ681

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ681 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 1.6 5.5 ± 0.2 0.9 1.1 ± 0.2 0.6 MAX. 4.1 ± 0.2 5.7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse(Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −60 V −60 V ±20 V −5 A −20 A 20 W 40.5 mJ −5 A 2 mJ 150 °C −55 to 150 °C 2.3 2.3 2.3 ± 0.2 123 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURCE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,...