STW220NF75

www.DataSheet4U.com N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET™ II POWER MOSFET STW220NF75 TYPE STW220NF75 s s s VDSS 75V RDS(on) <0.0044Ω ID 120A(**) TYPICAL RDS(on) = 0.004Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 TO-247 2 3 APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s AUTOMOTIVE 42V BATTERY SYSTEM s OR-ING FUNCTION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(**) ID(**) IDM() Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 75 75 ± 20 120 120 480 500 3.33 10 2500 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C ) Pulse width limited by safe operating area. (**) Current Limited by Package May 2003 (1) ISD ≤120A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 30V 1/8 STW220NF75 THERMAL DATA Rthj-case ...