D5050UK

www.DataSheet4U.com TetraFET D5050UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 50V – 30MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN F G H K I J SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss DMX PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE SIMPLE BIAS CIRCUITS LOW NOISE DIM mm A 28.83 B 21.97 C 45° D 6.86 E 3.43 Dia. F 5.84 G 13.97 Dia. H 6.60 I 0.13 J 3.81 K 2.54 M 27.94 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.25 0.13 0.51 Inches 1.135 0.865 45° 0.27 0.135 Dia. 0.230 0.550 Dia. 0.260 0.005 0.15 0.100 1.10 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.01 0.005 0.02 HIGH GAIN – 20 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 500W 125V ±20V 36A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders...