SI7392ADP

Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V PowerPAK SO-8 ID (A) 30 30 Qg (Typ.) 12 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7392ADP-T1-E3 (Lead (Pb)-free) Si7392ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition Extremely Low Qgd for Low Switching Losses TrenchFET® Power MOSFET New Low Thermal ResistancePowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested Complaint to RoHS Directive 2002/95/EC D APPLICATIONS High-Side DC/DC Conversion - Notebook - Server G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C)a TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C IAS EAS Maximum Power Dissipationa TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 30 ± 20 30 30 17.5b, c 14.0b, c 50 30 4.5b, c 25 30 27.5 17.5 5b, c 3.2b, c - 55 to 150 260 Unit V A A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum...