NTMSD3P102R2
FETKY™
P-Channel Enhancement-Mode
Power MOSFET and Schottky Diode
Dual SO-8 Package
Features
•ăHigh Ef...
NTMSD3P102R2
FETKY™
P-Channel Enhancement-Mode
Power MOSFET and
Schottky Diode
Dual SO-8 Package
Features
ăHigh Efficiency Components in a Single SO-8 Package ăHigh Density Power MOSFET with Low RDS(on),
Schottky Diode with Low VF
ăIndependent Pin-Outs for MOSFET and
Schottky Die
Allowing for Flexibility in Application Use
ăLess Component Placement for Board Space Savings ăSO-8 Surface Mount Package,
Mounting Information for SO-8 Package Provided
ăPb-Free Packages are Available
Applications
ăDC-DC Converters ăLow Voltage Motor Control ăPower Management in Portable and Battery-Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted).
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4)
VDSS
VGS
RqJA PD ID ID IDM
-20 "20
V V
171 0.73 -2.34 -1.87 -8.0
°C/W W A A A
Thermal Resistance -
Junction-to-Ambient (Note 2)
Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4)
RqJA PD
ID
ID IDM
100 1.25 -3.05 -2.44 -12
°C/W W A A A
Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Cur...