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IRGB4056DPBF Dataheets PDF



Part Number IRGB4056DPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGB4056DPBF DatasheetIRGB4056DPBF Datasheet (PDF)

PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel IRGB4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(m.

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PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel IRGB4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.55V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C E C G TO-220AB G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current c Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current e Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) Max. 600 24 12 48 48 24 12 48 ±20 ±30 140 70 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ––– ––– ––– ––– Typ. ––– ––– 0.50 80 Max. 1.07 3.66 ––– ––– Units V A V W °C Units °C/W 1 www.irf.com 04/11/08 IRGB4056DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage Min. Typ. Max. Units Conditions 600 — — f V VGE = 0V, IC = 100µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.55 1.85 IC = 12A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.90 — V IC = 12A, VGE = 15V, TJ = 150°C — 1.97 — IC = 12A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 350µA ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 7.7 — S VCE = 50V, IC = 12A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 2.0 25 µA VGE = 0V, VCE = 600V — 475 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 2.10 3.10 V IF = 12A — 1.61 — IF = 12A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Ref.Fig CT6 CT6 5,6,7 9,10,11 9, 10, 11, 12 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) — 25 38 IC = 12A 24 Qge Gate-to-Emitter Charge (turn-on) — 7.0 11 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 11 16 VCC = 400V Eon Turn-On Switching Loss — 75 118 IC = 12A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 225 273 µJ RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 300 391 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 31 40 IC = 12A, VCC = 400V, VGE = 15V CT4 tr Rise time — 17 24 ns RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 83 94 tf Fall time — 24 31 Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss — 185 — IC = 12A, VCC = 400V, VGE=15V 13, 15 — 355 — fà µJ RG=22Ω, L=100µH, LS=150nH, TJ = 175°C CT4 Etotal Total Switching Loss — 540 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 30 — IC = 12A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 18 — ns RG = 22Ω, L = 200µH, LS = 150nH CT4 td(off) Turn-Off delay time — 102 — TJ = 175°C WF1 tf Fall time — 41 — WF2 Cies Input Capacitance — 765 — pF VGE = 0V 23 Coes Output Capacitance — 52 — VCC = 30V Cres Reverse Transfer Capacitance — 23 — f = 1.0Mhz TJ = 175°C, IC = 48A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 22Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400.


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