Document
PD - 97188A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package
C
G E
n-channel
IRGB4056DPbF
VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.55V
Benefits
• High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI
C
E C G TO-220AB
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current
c Clamped Inductive Load Current
Diode Continous Forward Current Diode Continous Forward Current
e Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600 24 12 48 48 24 12 48 ±20 ±30 140 70 -55 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Min.
––– ––– ––– –––
Typ.
––– ––– 0.50 80
Max.
1.07 3.66 ––– –––
Units
V
A
V W °C
Units
°C/W
1
www.irf.com
04/11/08
IRGB4056DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
600 —
—
f V VGE = 0V, IC = 100µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
— 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.55 1.85
IC = 12A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90 —
V IC = 12A, VGE = 15V, TJ = 150°C
— 1.97 —
IC = 12A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0
—
6.5
V VCE = VGE, IC = 350µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
—
-18
— mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe
Forward Transconductance
—
7.7
—
S VCE = 50V, IC = 12A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
—
2.0
25 µA VGE = 0V, VCE = 600V
— 475 —
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
— 2.10 3.10 V IF = 12A
— 1.61 —
IF = 12A, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100 nA VGE = ±20V
Ref.Fig CT6 CT6 5,6,7
9,10,11
9, 10, 11, 12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg
Total Gate Charge (turn-on)
—
25
38
IC = 12A
24
Qge
Gate-to-Emitter Charge (turn-on)
—
7.0
11 nC VGE = 15V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
—
11
16
VCC = 400V
Eon
Turn-On Switching Loss
—
75 118
IC = 12A, VCC = 400V, VGE = 15V
CT4
Eoff
Turn-Off Switching Loss
— 225 273 µJ RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 300 391
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
—
31
40
IC = 12A, VCC = 400V, VGE = 15V
CT4
tr
Rise time
—
17
24 ns RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
—
83
94
tf
Fall time
—
24
31
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
— 185 —
IC = 12A, VCC = 400V, VGE=15V
13, 15
—
355
—
fà µJ RG=22Ω, L=100µH, LS=150nH, TJ = 175°C
CT4
Etotal
Total Switching Loss
— 540 —
Energy losses include tail & diode reverse recovery
WF1, WF2
td(on)
Turn-On delay time
—
30
—
IC = 12A, VCC = 400V, VGE = 15V
14, 16
tr
Rise time
—
18
—
ns RG = 22Ω, L = 200µH, LS = 150nH
CT4
td(off)
Turn-Off delay time
— 102 —
TJ = 175°C
WF1
tf
Fall time
—
41
—
WF2
Cies
Input Capacitance
— 765 — pF VGE = 0V
23
Coes
Output Capacitance
—
52
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
23
—
f = 1.0Mhz
TJ = 175°C, IC = 48A
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22Ω, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs VCC = 400.