FDMC2674

www.DataSheet4U.com FDMC2674 N-Channel UltraFET Trench® MOSFET May 2006 FDMC2674 N-Channel UltraFET Trench® MOSFET 220V, 1A, 366mΩ Features General Description „ Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A „ Typ Qg = 12.7nC at VGS = 10V „ Low Miller charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability ( Single Pulse and Repetitive Pulse) „ RoHS Compliant tm UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures Bottom 5 6 7 8 D 1 D D D Top 5 6 S G 4 3 2 1 4 3 2 7 8 S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Operating and Storage Temperature Ratings 220 ±20 1 13.8 (Note 3) 13 2.4 -55 to 150 Units V V A mJ W °C Thermal Characteristics RθJA RθJA Thermal Resistance , Junction to Ambient Thermal Resistance , Junction to Ambient (Note 1a) (Note 1b) 52 108 °C/W °C/W Package Marking and Ordering Information Device Marking FDMC2674 Device FDMC2674 Package MLP 3.3 x 3.3 1 Reel Size 7’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com ©2006...