FDMC2610

www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. „ Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A „ Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A „ Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm „ RoHS Compliant tm Application „ DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage -Continuous (Silicon limited) Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TA = 25°C (Note 1a) Ratings 200 ±20 9.5 2.2 15 42 2.1 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC2610 Device FDMC2610 Package MLP3.3X3.3 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMC2610 Rev.B 1 www.fairchildsemi.com FDMC2610 N-Channel UltraFET Trench® MOSFET Electrical Characteristics...