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DTD723YE / DTD723YM
Transistors
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
DTD723YE / DTD723YM
zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm)
DTD723YE
1.6 0.3
(3)
0.8 1.6
0.7 0.55
0.2
0.22
(1)(2)
0.8 1.2
zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. zStructure NPN epitaxial plannar silicon transistor (Resistor built-in type)
0.2 0.5 0.5
0.2
0.15
0.1Min.
(2)
(1)
EMT3 JEITA No. (SC-75A) JEDEC No.
1.0
(1) GND (2) IN (3) OUT
Each lead has same dimensions
Abbreviated symbol : M62
DTD723YM
0.2
1.2 0.32
(3)
0.4 0.4 0.8
0.13 0.5
(1) IN (2) GND (3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : M62
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature
∗1 ∗2
zPackaging specifications
Limits
Package
Unit V V mA mW C
C
EMT3
Taping
VMT3
Taping
Symbol VCC VIN IC (max) PD Tj Tstg
DTD723YE DTD723YM 30 −5 to +15 200 150 150 −55 to +150
Packaging type Code
TL 3000
T2L 8000 −
Part No. DTD723YE DTD723YM
Basic ordering unit (pieces)
−
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Input resistance Resistance ratio
∗ Characteristics of built-in transistor.
zEquivalent circuit
Max. 0.3 − 300 3.0 500 − − 2.86 5.5 Unit V mV mA nA − MHz kΩ − Conditions VCC= 5V, IO= 100µA VO= 0.3V, IO= 20mA IO/II= 50mA / 2.5mA VI= 5V VCC= 30V, VI=0V VO= 2V, IO= 100mA VCE= 10V, IE= −5mA, f=100MHz − −
IN GND OUT R1 IN R2 GND OUT
Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Min. − 2.5 − − − 140 − 1.54 3.6
Typ. − − 70 − − − 260 2.2 4.5
R1=2.2kΩ / R2=10kΩ
1/1
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, inclu.