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DTD723YM Dataheets PDF



Part Number DTD723YM
Manufacturers Rohm
Logo Rohm
Description Digital transistors
Datasheet DTD723YM DatasheetDTD723YM Datasheet (PDF)

www.DataSheet4U.com DTD723YE / DTD723YM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD723YE / DTD723YM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTD723YE 1.6 0.3 (3) 0.8 1.6 0.7 0.55 0.2 0.22 (1)(2) 0.8 1.2 zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The .

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www.DataSheet4U.com DTD723YE / DTD723YM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD723YE / DTD723YM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTD723YE 1.6 0.3 (3) 0.8 1.6 0.7 0.55 0.2 0.22 (1)(2) 0.8 1.2 zFeature 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4) Only the on / off conditions need to be set for operation, making the device design easy. zStructure NPN epitaxial plannar silicon transistor (Resistor built-in type) 0.2 0.5 0.5 0.2 0.15 0.1Min. (2) (1) EMT3 JEITA No. (SC-75A) JEDEC No. 1.0 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : M62 DTD723YM 0.2 1.2 0.32 (3) 0.4 0.4 0.8 0.13 0.5 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : M62 zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Storage temperature ∗1 ∗2 zPackaging specifications Limits Package Unit V V mA mW C C EMT3 Taping VMT3 Taping Symbol VCC VIN IC (max) PD Tj Tstg DTD723YE DTD723YM 30 −5 to +15 200 150 150 −55 to +150 Packaging type Code TL 3000 T2L 8000 − Part No. DTD723YE DTD723YM Basic ordering unit (pieces) − ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Input resistance Resistance ratio ∗ Characteristics of built-in transistor. zEquivalent circuit Max. 0.3 − 300 3.0 500 − − 2.86 5.5 Unit V mV mA nA − MHz kΩ − Conditions VCC= 5V, IO= 100µA VO= 0.3V, IO= 20mA IO/II= 50mA / 2.5mA VI= 5V VCC= 30V, VI=0V VO= 2V, IO= 100mA VCE= 10V, IE= −5mA, f=100MHz − − IN GND OUT R1 IN R2 GND OUT Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. − 2.5 − − − 140 − 1.54 3.6 Typ. − − 70 − − − 260 2.2 4.5 R1=2.2kΩ / R2=10kΩ 1/1 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, inclu.


DTD723YE DTD723YM FAN8036


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