TPCF8B01

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA) Low forward voltage: VFM(2) = 0.46 V (typ.) Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) VDSS VDGR VGSS ID IDP EAS IAR EAR -20 V -20 V ±8 V -2.7 A -10.8 1.2 mJ -1.35 A 0.11 mJ SBD (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current (Note 2a, 6) Peak one cycle surge forward current (non-repetitive) Symbol VRRM IF(AV) IFSM Rating Unit 20 V 1.0 A 7(50Hz) A JEDEC ― JEITA ― TOSHIBA 2-3U1C Weight: 0.011 g (typ.) Circuit Configuration 87 6 5 Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Symbol Rating Unit Single-device operation Drain power dissipation (Note 3a) (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) ...