www.vishay.com
SD101AW, SD101BW, SD101CW
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATRUES
• For general purpose applications
• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications
• The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART SD101AW SD101BW SD101CW
ORDERING CODE
SD101AW-E3-08 or SD101AW-E3-18 SD101AW-HE3-08 or SD101AW-HE3-18
SD101BW-E3-08 or SD101BW-E3-18 SD101BW-HE3-08 or SD101BW-HE3-18
SD101CW-E3-08 or SD101CW-E3-18 SD101CW-HE3-08 or SD101CW-HE3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING SA
Single diode
SB
Single diode
SC
REMARKS Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Power dissipation (infinite heatsink) (1) Forward continuous current Maximum single cycle surge
10 μs square wave
SD101AW SD101BW SD101CW
VRRM VRRM VRRM Ptot
IF IFSM
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 60 50 40 400 30 2
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature (1)
Tj
Storage temperature range
Tstg
Operating ttemperature range
Top
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 300 125
- 65 to + 150 - 55 to + 125
UNIT V V V
mW mA A
UNIT K/W °C °C °C
Rev. 1.8, 25-Feb-13
1 Document Number: 85679
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SD101AW, SD101BW, SD101CW
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Reverse breakdown voltage Leakage current
Forward voltage drop
Diode capacitance Reverse recovery time
IR = 10 μA VR = 50 V VR = 40 V VR = 30 V IF = 1 mA
IF = 15 mA
VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR
SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW
V(BR) V(BR) V(BR)
IR IR IR VF VF VF VF VF VF CD CD CD trr
60 50 40
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
MAX.
200 200 200 410 400 390 1000 950 900
2 2.1 2.2 1
UNIT V V V nA nA nA mV mV mV mV mV mV pF pF pF ns
I F - Forward Current (mA)
10 A B C
1
0.1
0.01 0
18477
0.2 0.4 0.6 0.8 VF - Forward Voltage (V)
1.0
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
I R - Reverse Current (µA)
100
125 °C 10
100 °C
1
0.1
0.01 0
18479
75 °C 50 °C
25 °C
10 20 30 40 VR - Reverse Voltage (V)
50
Fig. 3 - Typical Variation of Reverse Current at Various Temperatures
I F - Forward Current (mA)
100 A B
80 C
60 40
20
0 0
18478
0.2 0.4 0.6 0.8 VF - Forward Voltage (V)
1.0
Fig. 2 - Typical Forward Conduction Curve
CD - Typical Capacitance (pF)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
0.4 0.2
0 0
18480
Tj = 25 °C A BC
10 20 30 40 VR - Reverse Voltage (V)
50
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 1.8, 25-Feb-13
2 Document Number: 85679
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SD101AW, SD101BW, SD101CW
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
1.35 (0.053) 1 (0.039) 0.2 (0.008)
0° to 8° 0.15 (0.006) 0.10 (0.004)
0.1 (0.004) max.
0.45 (0.018) 0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112) 2.55 (0.100)
3.85 (0.152) 3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4)
17432
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
2.5 (0.098)
0.65 (0.026) 0.45 (0.018) 1.7 (0.067) 1.40 (0.055) 0.85 (0.033)
Rev. 1.8, 25-Feb-13
3 Document Number: 85679
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS,.