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SD101AW Dataheets PDF



Part Number SD101AW
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Small Signal Schottky Diodes
Datasheet SD101AW DatasheetSD101AW Datasheet (PDF)

www.vishay.com SD101AW, SD101BW, SD101CW Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATRUES • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • The SD101 seri.

  SD101AW   SD101AW


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www.vishay.com SD101AW, SD101BW, SD101CW Vishay Semiconductors Small Signal Schottky Diodes MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATRUES • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART SD101AW SD101BW SD101CW ORDERING CODE SD101AW-E3-08 or SD101AW-E3-18 SD101AW-HE3-08 or SD101AW-HE3-18 SD101BW-E3-08 or SD101BW-E3-18 SD101BW-HE3-08 or SD101BW-HE3-18 SD101CW-E3-08 or SD101CW-E3-18 SD101CW-HE3-08 or SD101CW-HE3-18 INTERNAL CONSTRUCTION Single diode TYPE MARKING SA Single diode SB Single diode SC REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Repetitive peak reverse voltage Power dissipation (infinite heatsink) (1) Forward continuous current Maximum single cycle surge 10 μs square wave SD101AW SD101BW SD101CW VRRM VRRM VRRM Ptot IF IFSM Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 60 50 40 400 30 2 THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) RthJA Junction temperature (1) Tj Storage temperature range Tstg Operating ttemperature range Top Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 300 125 - 65 to + 150 - 55 to + 125 UNIT V V V mW mA A UNIT K/W °C °C °C Rev. 1.8, 25-Feb-13 1 Document Number: 85679 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SD101AW, SD101BW, SD101CW Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Reverse breakdown voltage Leakage current Forward voltage drop Diode capacitance Reverse recovery time IR = 10 μA VR = 50 V VR = 40 V VR = 30 V IF = 1 mA IF = 15 mA VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW V(BR) V(BR) V(BR) IR IR IR VF VF VF VF VF VF CD CD CD trr 60 50 40 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYP. MAX. 200 200 200 410 400 390 1000 950 900 2 2.1 2.2 1 UNIT V V V nA nA nA mV mV mV mV mV mV pF pF pF ns I F - Forward Current (mA) 10 A B C 1 0.1 0.01 0 18477 0.2 0.4 0.6 0.8 VF - Forward Voltage (V) 1.0 Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage I R - Reverse Current (µA) 100 125 °C 10 100 °C 1 0.1 0.01 0 18479 75 °C 50 °C 25 °C 10 20 30 40 VR - Reverse Voltage (V) 50 Fig. 3 - Typical Variation of Reverse Current at Various Temperatures I F - Forward Current (mA) 100 A B 80 C 60 40 20 0 0 18478 0.2 0.4 0.6 0.8 VF - Forward Voltage (V) 1.0 Fig. 2 - Typical Forward Conduction Curve CD - Typical Capacitance (pF) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 18480 Tj = 25 °C A BC 10 20 30 40 VR - Reverse Voltage (V) 50 Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage Rev. 1.8, 25-Feb-13 2 Document Number: 85679 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SD101AW, SD101BW, SD101CW Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOD-123 1.35 (0.053) 1 (0.039) 0.2 (0.008) 0° to 8° 0.15 (0.006) 0.10 (0.004) 0.1 (0.004) max. 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Mounting Pad Layout 0.85 (0.033) 0.85 (0.033) 2.5 (0.098) 0.65 (0.026) 0.45 (0.018) 1.7 (0.067) 1.40 (0.055) 0.85 (0.033) Rev. 1.8, 25-Feb-13 3 Document Number: 85679 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS,.


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