MRF9002NR2

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power Features Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters RoHS Compliant In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MRF9002NR2 1000 MHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET 16 1 CASE 978 - 03 PLASTIC PFP - 16 N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C. 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 DRAIN 1−1 DRAIN 1−2 DRAIN 2−1 DRAIN 2−2 N.C. DRAIN 3−1 DRAIN 3−2 N.C. (Top View) Note: Exposed backside flag is source terminal for transistors. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Dissipation Per Transistor @ TC = 25°C ...