Document
N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET
TYPE STP7NK40Z STP7NK40ZFP STD7NK40Z STD7NK40Z-1
s s s s s s
STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1
VDSS 400 400 400 400 V V V V
RDS(on) <1Ω <1Ω <1Ω <1Ω
ID 5.4 A 5.4 A 5.4 A 5.4 A
Pw 70 W 25 W 70 W 70 W
3 1 2
TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
TO-220FP
3 1
1
3 2
DPAK
IPAK
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING
ORDERING INFORMATION
SALES TYPE STP7NK40Z STP7NK40ZFP STD7NK40ZT4 STD7NK40Z-1 MARKING P7NK40Z P7NK40ZFP D7NK40Z D7NK40Z PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE
September 2002
1/13
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP7NK40Z
Value
STP7NK40ZFP STD7NK40Z STD7NK40Z-1
Unit
VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5.4 3.4 21.6 70 0.56
400 400 ± 30 5.4 (*) 3.4 (*) 21.6 (*) 25 0.2 3000 4.5 2500 -55 to 150 -55 to 150 5.4 3.4 21.6 70 0.56
V V V A A A W W/°C V V/ns V °C °C
(l) Pulse width limited by safe operating area (1) I SD ≤5.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.78 62.5 300 TO-220FP 5 DPAK IPAK 1.78 100 °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5.4 130 Unit A mJ
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them s.