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FDB8896 Dataheets PDF



Part Number FDB8896
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDB8896 DatasheetFDB8896 Datasheet (PDF)

FDB8896 May 2008 FDB8896 N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters tm Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench t.

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FDB8896 May 2008 FDB8896 N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters tm Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability D GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 93 85 19 Figure 4 74 80 0.53 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-263 1.88 RθJA Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8896 Device FDB8896 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2008 Fairchild Semiconductor Corporation FDB8896 Rev. B2 FDB8896 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics (VGS = 10V) tON Turn-On Time td(ON) Turn-On Delay Time tr Rise Time td(OFF) tf Turn-Off Delay Time Fall Time tOFF Turn-Off Time VDD = 15V, ID = 35A VGS = 4.5V, RGS = 6.2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time QRR Reverse Recovered Charge Notes: 1: Package current limitation is 80A. 2: Starting TJ = 25°C, L = 36µH, IAS = 64A, VDD = 27V, VGS = 10V. 3: Pulse width = 100s. 4 ISD = 35A ISD = 20A ISD = 35A, dISD/dt = 100A/µs ISD = 35A, dISD/dt = 100A/µs Min Typ Max Units 30 - - V - - 1 µA - - 250 - - ±100 nA 1.2 - 2.5 V - 0.0049 0.0057 - 0.0059 0.0068 Ω - 0.0078 0.0094 - 2525 - pF - 490 - pF - 300 - pF - 2.3 - Ω - 48 67 nC - 25 36 nC - 2.3 3.0 nC - 8 - nC - 5.7 - nC - 9.5 - nC - - 167 ns - 9 - ns - 102 - ns - 58 - ns - 44 - ns - - 153 ns - - 1.25 V - - 1.0 V - - 27 ns - - 12 nC ©2008 Fairchild Semiconductor Corporation FDB8896 Rev. B2 FDB8896 Typical Characteristics TC = 25°C unless otherwise noted ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 100 CURRENT LIMITED 1.0 BY PACKAGE 80 0.8 VGS = 10V 60 0.6 VGS = 4.5V 40 0.4 0.2 20 0 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature ZθJC, NORMALIZED THERMAL IMPEDANCE 2 DUTY CYCLE - DESCENDING ORDER 1 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 0.01 10-5 SINGLE PULSE 10-4 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 4.5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) 100 50 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) Figure 4. Peak Current Capability ©2008 Fairchild Semiconductor Corporation FDB8896 Rev. B2 FDB8896 Typical Characteristics TC = 25°C unless otherwise noted 1000 100 10µs 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R.


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