Document
FDB8896
May 2008
FDB8896
N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
• DC/DC converters
tm
Features
• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low
rDS(ON) • Low gate charge • High power and current handling capability
D GATE
SOURCE TO-263AB FDB SERIES
DRAIN (FLANGE)
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings 30 ±20
93 85 19 Figure 4 74 80 0.53 -55 to 175
Units V V
A A A A mJ W W/oC oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-263
1.88
RθJA
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
62
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
oC/W oC/W oC/W
Package Marking and Ordering Information
Device Marking FDB8896
Device FDB8896
Package TO-263AB
Reel Size 330mm
Tape Width 24mm
Quantity 800 units
©2008 Fairchild Semiconductor Corporation
FDB8896 Rev. B2
FDB8896
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V, f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VGS = 0V to 1V
VDD = 15V ID = 35A Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
Rise Time
td(OFF) tf
Turn-Off Delay Time Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 35A VGS = 4.5V, RGS = 6.2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
Notes:
1: Package current limitation is 80A. 2: Starting TJ = 25°C, L = 36µH, IAS = 64A, VDD = 27V, VGS = 10V. 3: Pulse width = 100s.
4
ISD = 35A ISD = 20A ISD = 35A, dISD/dt = 100A/µs ISD = 35A, dISD/dt = 100A/µs
Min Typ Max Units
30
-
-
V
-
-
1
µA
-
-
250
-
-
±100 nA
1.2
-
2.5
V
- 0.0049 0.0057
-
0.0059 0.0068
Ω
- 0.0078 0.0094
-
2525
-
pF
-
490
-
pF
-
300
-
pF
-
2.3
-
Ω
-
48
67
nC
-
25
36
nC
-
2.3
3.0
nC
-
8
-
nC
-
5.7
-
nC
-
9.5
-
nC
-
-
167
ns
-
9
-
ns
-
102
-
ns
-
58
-
ns
-
44
-
ns
-
-
153
ns
-
-
1.25
V
-
-
1.0
V
-
-
27
ns
-
-
12
nC
©2008 Fairchild Semiconductor Corporation
FDB8896 Rev. B2
FDB8896
Typical Characteristics TC = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
100
CURRENT LIMITED
1.0
BY PACKAGE
80
0.8
VGS = 10V
60
0.6
VGS = 4.5V
40 0.4
0.2
20
0
0
25
50
75
100
125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case Temperature
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZθJC, NORMALIZED THERMAL IMPEDANCE
2 DUTY CYCLE - DESCENDING ORDER
1 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
0.01 10-5
SINGLE PULSE 10-4
t1
t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000 VGS = 4.5V
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC 150
IDM, PEAK CURRENT (A)
100
50
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2008 Fairchild Semiconductor Corporation
FDB8896 Rev. B2
FDB8896
Typical Characteristics TC = 25°C unless otherwise noted
1000 100
10µs
500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0 tAV = (L/R.