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STC04IE170HV

ST Microelectronics
Part Number STC04IE170HV
Manufacturer ST Microelectronics
Description Emitter Switched Bipolar Transistor
Published Nov 20, 2006
Detailed Description STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω Features VCS(ON) IC RCS(ON) 0...
Datasheet PDF File STC04IE170HV PDF File

STC04IE170HV
STC04IE170HV

Overview
STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.
17 Ω Features VCS(ON) IC RCS(ON) 0.
7 V 4 A 0.
17 Ω ■ High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time Application ■ Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications.
It is designed for use in gate driven based topologies.
1 234 TO247-4L HV Figure 1.
Internal schematic diagrams Table 1.
Device summa...


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