XN06534

www.DataSheet4U.com Composite Transistors XN06534 (XN6534) Silicon NPN epitaxial planar type For high-frequency amplification 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit: mm 0.16+0.10 –0.06 1.50+0.25 –0.05 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 2SC2404 × 2 10˚ 1.1+0.2 –0.1 (0.65) Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half 3 2 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 3 15 200 150 −55 to +150 Unit V V V mA mW °C °C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: 7F Internal Connection 4 5 6 1.1+0.3 –0.1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr2 3 2 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio hFE ratio * Transition frequency Reverse transfer capacitance (Common emitter) Power gain Noise figure Symbol VCBO VEBO VBE hFE hFE(Small /Large) Conditions IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 6 V, IE = −1 mA VCB = 6 V, IE = −1 mA VCB = 6 V, IE = −1 mA VCB = 6 V, IE = −1 mA, f = 200 MHz VCB = 6 V, IE = −1 mA, f = 10.7 ...