XN06435

www.DataSheet4U.com Composite Transistors XN06435 (XN6435) Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification ■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 ■ Basic Part Number 2SA1022 × 2 0.50+0.10 –0.05 10˚ 1.1+0.2 –0.1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating −30 −20 −5 −30 300 150 −55 to +150 Unit V V V mA mW °C °C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: 7W Internal Connection 4 5 6 1.1+0.3 –0.1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr2 3 2 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio * Symbol VBE ICBO ICEO IEBO hFE hFE(Small /Large) Conditions VCE = −10 V, IC = −1 mA VCB = −10 V, IE = 0 VCE = −20 V, IB = 0 VEB = −5 V, IC = 0 VCB = −10 V, IE = 1 mA VCB = −10 V, IE = 1 mA IC = −10 mA, IB = −1 mA VCB = −10 V, I...