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RB051LA-40
Diodes
Schottky barrier diode
RB051LA-40
zApplications General rectification zFeatures ...
www.DataSheet4U.com
RB051LA-40
Diodes
Schottky barrier diode
RB051LA-40
zApplications General rectification zFeatures 1) Small and Thin power type (PMDT) 2) High reliability. 3) Low IR zExternal dimensions (Unit : mm)
1.5±0.2
CATHODE MARK
zLand size figure (Unit : mm)
0.2± 0.15 0.1
2.0
mold
4.7±0.3
1.4
3.8±0.2
zStructure Silicon epitaxial planar
ROHM : PMDT
PMDT
2.6±0.2 0.95±0.1
zStructure
zTaping dimensions (Unit : mm)
2.0±0.05 4.0±0.1 1.75±0.1 φ1.55±0.1 0 0.25±0.05
1.4
5.5±0.05
12.0±0.2
φ1.55±0.1 0 2.7±0.1 4.0±0.1 1.25±0.1
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature
Limits Symbol 40 VRM 20 VR 3.0 Io IFSM 70 125 Tj -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, TL=90℃ max.
5.0±0.1
Unit V V A A ℃ ℃
zElectrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current
Symbol VF1 VF2 IR1 IR2
Min. -
Typ. -
Max. 0.35 0.45 1 150
Unit V V mA µA
Conditions IF=1A IF=3A VR=20V VR=15V
5.0±0.1
4.4
1/3
RB051LA-40
Diodes
zElectrical characteristic curves
10 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=25℃ Ta=-25℃ 1000000 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF...