MRF1550NT1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 175 MHz, 12.5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive Features Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Broadband - Full Power Across the Band: 135 - 175 MHz Broadband Demonstration Amplifier Information Available Upon Request 200_C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1550NT1 MRF1550FNT1 175 MHz, 50 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1264 - 09, STYLE 1 TO - 272 - 6 WRAP PLASTIC MRF1550NT1 CASE 1264A - 02, STYLE 1 TO - 272 - 6 PLASTIC MRF1550FNT1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.5, +...