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STP19N06FI Dataheets PDF



Part Number STP19N06FI
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Datasheet STP19N06FI DatasheetSTP19N06FI Datasheet (PDF)

www.DataSheet4U.com STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOI.

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www.DataSheet4U.com STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP19N06 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP19N06FI 60 60 ± 20 19 13 76 80 0.53  -65 to 175 175 13 9 76 35 0.23 2000 Unit V V V A A A W W/o C V o o C C (•) Pulse width limited by safe operating area February 1995 1/10 STP19N06/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.88 62.5 0.5 300 ISOWATT220 4.29 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) o Max Value 19 76 19 13 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VG S = 0 Min. 60 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A T c = 100 o C 19 Min. 2 Typ. 3 0.085 Max. 4 0.1 0.2 Unit V Ω Ω A V GS = 10V ID = 9.5 A V GS = 10V I D = 9.5 A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 9.5 A VG S = 0 Min. 7 Typ. 9 550 230 80 700 290 100 Max. Unit S pF pF pF 2/10 STP19N06/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 30 V ID = 9.5 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) V DD = 48 V ID = 19 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) V DD = 48 V ID = 19 A V GS = 10 V Min. Typ. 30 90 170 Max. 42 120 Unit ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 23 10 8 30 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 48 V I D = 19 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ. 14 20 40 Max. 20 28 56 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM( • ) VS D (∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 19 A VG S = 0 60 0.16 5 I SD = 19 A di/dt = 100 A/ µ s T j = 150 o C V DD = 30 V (see test circuit, figure 5) Test Conditions Min. Typ. Max. 19 76 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 3/10 STP19N06/FI Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Transfer Characteristics 4/10 STP19N06/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STP19N06/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STP19N06/FI Fig. 1.


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