N-Channel E nhancement Mode F ield E ffect Transistor
Description
S T U/D9410
S amHop Microelectronics C orp. P reliminary May.28 2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 30V
F E AT UR E S
( m W ) Max
ID
24A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
32 @ V G S = 10V 57 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
...
