SI7415DN-RC

www.DataSheet4U.com Si7415DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 4.5197 7.4284 11.8825 56.6379 Ambient 6.7430 m 32.7582 m 109.4727 m 1.1804 Case 362.3679 u 504.3467 m 972.1139 m 937.1926 m Case 1.9260 m 787.5516 u 18.2079 m 9.3126 m Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73837 Revision 03-Mar-06 www.vishay.com 1 Si7415DN_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILT...