NTMD3N08LR2

www.DataSheet4U.com NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package Features http://onsemi.com Ultra Low On–Resistance Provides Higher Efficiency ♦ RDS(on) = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses Internal RG = 50 W Designed for Power Management Solutions in 42 V Automotive System Applications IDSS and RDS(on) Specified at Elevated Temperature Avalanche Energy Specified Miniature SO–8 Surface Mount Package – Saves Board Space Mounting Information for SO–8 Package Provided 2.3 AMPERES 80 VOLTS 215 mΩ @ VGS = 5 V (Typ) Applications Integrated Starter Alternator Electronic Power Steering Electronic Fuel Injection Catalytic Converter Heaters DUAL SO–8 CASE 751 STYLE 11 MARKING DIAGRAM & PIN ASSIGNMENT Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS Value 80 80 ±15 ±20 2.3 25 3.1 –55 to +175 25 A W °C mJ 3N08 A Y WW Unit V V Source 1 Gate 1 Source 2 Gate 2 1 2 3 4 (Top View) = Specific Device Code = Assembly Location = Year = Work Week 3N08 AYWW 8 7 6 5 Drain 1 Drain 1 Drain 2 Drain 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Source Voltage (RGS = 1.0 mW) Gate–to–Source Voltage – Continuous Gate–to–Source Voltage – Non–Repetitive (tp ≤ 10 ms) Continuous Drain Current @ TA = 25°C Pulsed Drain Current (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Singl...