IRHY9130CM

www.DataSheet4U.com PD - 91400C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level IRHY9130CM 100K Rads (Si) IRHY93130CM 300K Rads (Si) RDS(on) 0.30 Ω 0.30 Ω ID -11A -11A IRHY9130CM JANSR2N7382 100V, P-CHANNEL REF: MIL-PRF-19500/615 ® RAD Hard HEXFET TECHNOLOGY ™ QPL Part Number JANSR2N7382 JANSF2N7382 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-257AA Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche ...