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MRF5S21090LSR3 Dataheets PDF



Part Number MRF5S21090LSR3
Manufacturers Motorola
Logo Motorola
Description RF Power Field Effect Transistors
Datasheet MRF5S21090LSR3 DatasheetMRF5S21090LSR3 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Perform.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21090L/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21090LR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 19 Watts Avg. Power Gain — 14.5 dB Efficiency — 26% IM3 — - 37.5 dBc ACPR — - 40.5 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 224 1.28 - 65 to +150 200 Unit Vdc Vdc N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3 2170 MHz, 19 W AVG., 2 x W - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF5S21090LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S21090LSR3 Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 90 W CW Case Temperature 80°C, 19 W CW Symbol RθJC Value (1,2) 0.78 0.80 Unit °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF5S21090LR3 MRF5S21090LSR3 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Cl.


MRF5S21090LR3 MRF5S21090LSR3 NC41120-0015


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