28F128J3

www.DataSheet4U.com Intel StrataFlash® Memory (J3) 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffer —6.8 µs per byte effective programming time Software — Program and Erase suspend support — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible Security — 128-bit Protection Register —64-bit Unique Device Identifier —64-bit User Programmable OTP Cells — Absolute Protection with VPEN = GND — Individual Block Locking — Block Erase/Program Lockout during Power Transitions ■ ■ ■ Architecture — Multi-Level Cell Technology: High Density at Low Cost — High-Density Symmetrical 128-Kbyte Blocks —256 Mbit (256 Blocks) (0.18µm only) —128 Mbit (128 Blocks) —64 Mbit (64 Blocks) —32 Mbit (32 Blocks) Quality and Reliability — Operating Temperature: -40 °C to +85 °C — 100K Minimum Erase Cycles per Block — 0.18 µm ETOX™ VII Process (J3C) — 0.25 µm ETOX™ VI Process (J3A) Packaging and Voltage — 56-Lead TSOP Package — 64-Ball Intel® Easy BGA Package — Lead-free packages available — 48-Ball Intel® VF BGA Package (32 and 64 Mbit) (x16 only) — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.6 V Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3) device provides 2X the...