SUM85N03-07P

www.DataSheet4U.com SUM85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V ID (A) 85 71 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance APPLICATIONS D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier D TO-263 G G D S S N-Channel MOSFET Top View SUM85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85 60 200 45 101 93b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72036 S-03919—Rev. A, 19-May-03 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.6 Unit _C/W 1 www.DataSheet4U.com SUM85N03-07P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-B...