SUM60P05-11LT

www.DataSheet4U.com SUM60P05-11LT Vishay Siliconix P-Channel 55-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 FEATURES ID (A) –60a –60a rDS(on) (W) 0.011 @ VGS = –10 V 0.0175 @ VGS = –4.5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS S D Automotive D Industrial D2PAK-5L T1 G D1 T2 D2 1 2 3 4 5 D G D T1 S T2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit –55 "20 –60a –60a –250 –60a –60a 180 200c 3.75d –55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71748 S-05060—Rev. A, 12-Nov-01 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.75 Unit _C/W 1 www.DataSheet4U.com SUM60P05-11LT Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body...