SUM16N20-125

www.DataSheet4U.com SUM16N20-125 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.125 @ VGS = 10 V 0.150 @ VGS = 6 V ID (A) 16 14.6 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching APPLICATIONS D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D Isolated DC/DC converters - Primary-Side Switch - High Voltage Synchronous Rectifier D TO-263 G G D S S N-Channel MOSFET Top View SUM16N20-125 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 16 9.2 25 10 5 100b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72076 S-31273—Rev. C, 16-Jun-03 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 1.5 Unit _C/W 1 www.DataSheet4U.com SUM16N20-125 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Br...