IRGB4055PBF

PD - 97058B PDP TRENCH IGBT IRGB4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGS4055PbF Key Parameters VCE min 300 cV CE(ON) typ. @ 110A IRP max @ TC= 25°C TJ max 1.70 270 150 V V A °C C CC G E n-channel GCE TO-220 IRGB4055DPbF GCE D2Pak IRGS4055DPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V cRepetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter dJunction-to-Case Case-to-Sink, Flat Greased Sur...