MW4IC915MBR1

www.DataSheet4U.com MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power — 3 Watts Avg. Power Gain — 31 dB Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM — 1.5% Typical Performance: 860-960 MHz, 26 Volts Output Power — 15 Watts CW Power Gain — 30 dB Efficiency — 44% On Chip Matching (50 Ohm Input, >3 Ohm Output) Integrated Temperature Compensation Capability with Enable/Disable Function Integrated ESD Protection Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance Also Available in Gull Wing for Surface Mount In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MW4IC915MBR1 MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA 860 - 960 M...