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STC03DE170
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1700 V - 3 A - 0.55 W
Table 1: General ...
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STC03DE170
HYBRID EMITTER SWITCHED BIPOLAR
TRANSISTOR ESBT™ 1700 V - 3 A - 0.55 W
Table 1: General Features
VCS(ON) 1V
n n n n
Figure 1: Package
RCS(ON) 0.55 W
IC 1.8 A
LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.7 W
3 4
APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170 is designed for use in aux flyback smps for any three phase application.
1
2
TO247-4L
Figure 2: Internal Schematic Diagram
Electrical Symbol
Table 2: Order Code
Part Number STC03DE170 Marking STC03DE170 Package TO247-4L
Device Structure
Packaging TUBE
October 2004
Rev. 2
1/9
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STC03DE170
Table 3: Absolute Maximum Ratings
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 1700 30 9 ± 20 3 6 2 4 100 -65 to 125 125 Unit V V V V A A A A W °C °C
Table 4: Thermal Data
Symbol Rthj-case Parameter Thermal Resistance Junctio...
