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STGY50NC60WD Dataheets PDF



Part Number STGY50NC60WD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel IGBT
Datasheet STGY50NC60WD DatasheetSTGY50NC60WD Datasheet (PDF)

www.DataSheet4U.com STGY50NC60WD N-channel 600V - 50A - Max247 Very fast PowerMESH™ IGBT PRELIMINARY DATA General features Type STGY50NC60WD ■ ■ ■ VCES 600V IC VCE(sat) (max)@25°C @100°C < 2.5V 50A High frequency operation Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode Max247 2 1 3 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the.

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www.DataSheet4U.com STGY50NC60WD N-channel 600V - 50A - Max247 Very fast PowerMESH™ IGBT PRELIMINARY DATA General features Type STGY50NC60WD ■ ■ ■ VCES 600V IC VCE(sat) (max)@25°C @100°C < 2.5V 50A High frequency operation Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode Max247 2 1 3 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. Internal schematic diagram Applications ■ ■ ■ High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers, UPS Order codes Part number STGY50NC60WD Marking GY50NC60WD Package Max247 Packaging Tube October 2006 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. DataSheet 4 U .com www.DataSheet4U.com Contents STGY50NC60WD Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 DataSheet 4 U .com www.DataSheet4U.com STGY50NC60WD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICM (2) IF VGE PTOT Tstg Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Diode RMS forward current at TC = 25°C Gate-emitter voltage Total dissipation at TC = 25°C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 80 50 190 30 ±20 260 Unit V A A A A V W 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Rthj-case Rthj-case Rthj-amb TL (1) Thermal resistance Parameter Thermal resistance junction-case max IGBT Thermal resistance junction-case max diode Thermal resistance junction-ambient max Maximum lead temperature for soldeing purpose Value 0.48 1.5 50 300 Unit °C/W °C/W °C/W °C 1. 1.6mm from case, for 10sec 3/11 DataSheet 4 U .com www.DataSheet4U.com Electrical characteristics STGY50NC60WD 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250µA VGE= Max rating,TC= 25°C VGE= Max rating,TC= 125°C VGE= ±20V , VCE= 0 VCE = 15V, IC= 20A 5.75 250 1 ±100 20 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 2 Min. Typ. 4700 410 90 155 32.4 82.2 Max. Unit pF pF pF nC nC nC 4/11 DataSheet 4 U .com www.DataSheet4U.com STGY50NC60WD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 40A , VGE= 15V, RG= 10Ω Figure 3 VCC = 390V, IC = 40A , VGE= 15V, RG= 10Ω Tj = 125°C Figure 3 VCC = 390V, IC = 40A RG= 10Ω , VGE= 15V, Figure 3 VCC = 390V, IC = 40A , VGE= 15V, RG= 10Ω Tj = 125°C Figure 3 Min. Typ. 52 17 2400 50 19 2000 31 240 35 60 280 63 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 40A , VGE= 15V, RG= 10Ω Figure 1 VCC = 390V, IC = 40A RG= 10Ω , VGE= 15V, Tj = 125°C Figure 1 .


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