MRF1513NT1

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large−signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. Specified Performance @ 520 MHz, 12.5 Volts D Output Power — 3 Watts Power Gain — 11 dB Efficiency — 55% Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large−Signal G Impedance Parameters Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request N Suffix Indicates Lead−Free Terminations S In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1513NT1 MRF1513T1 520 MHz, 3 W, 12.5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFET CASE 466−03, STYLE 1 PLD−1.5 PLASTIC Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value −0.5, +40 ± 20 2 31.25 0.25 − 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 4 Unit °C/W Table 3. Moisture Sensi...