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Freescale Semiconductor Technical Data
MRF1513 Rev. 6, 3/2005
RF Power Field Effect Transistor
N...
www.DataSheet4U.com
Freescale Semiconductor Technical Data
MRF1513 Rev. 6, 3/2005
RF Power Field Effect
Transistor
N−Channel Enhancement−Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large−signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. Specified Performance @ 520 MHz, 12.5 Volts D Output Power — 3 Watts Power Gain — 11 dB Efficiency — 55% Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large−Signal G Impedance Parameters Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request N Suffix Indicates Lead−Free Terminations S In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1513NT1 MRF1513T1
520 MHz, 3 W, 12.5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFET
CASE 466−03, STYLE 1 PLD−1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value −0.5, +40 ± 20 2 31.25 0.25 − 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 4 Unit °C/W
Table 3. Moisture Sensi...