High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120
Symbol
VDSS VDGR VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1200
V
1200
V
20
V
30
V
TC = 25C TC ...
