IRF1404ZSPBF

www.DataSheet4U.com AUTOMOTIVE MOSFET PD - 96040 Features l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 3.7mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A TO-220AB IRF1404ZPbF D2Pak TO-262 IRF1404ZSPbF IRF1404ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max. 180 120 75 710 200 Units A ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) W W/°C V mJ A mJ d 1.3 ± 20 IAR EAR TJ TSTG Avalanche Current Ù h 330 480 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avala...