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DR210G Dataheets PDF



Part Number DR210G
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Datasheet DR210G DatasheetDR210G Datasheet (PDF)

www.DataSheet4U.com DR200G - DR210G PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color ba.

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www.DataSheet4U.com DR200G - DR210G PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 2.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) DR DR DR DR DR DR DR 200G 201G 202G 204G 206G 208G 210G 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 2.0 420 600 560 800 700 1000 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) CJ RθJA TJ TSTG 50 1.0 5.0 50 75 20 - 65 to + 175 - 65 to + 175 Amps. Volts µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. UPDATE : MAY 27, 1998 www.DataSheet4U.com RATING AND CHARACTERISTIC CURVES ( DR200G - DR210G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.0 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE 40 1.6 1.2 30 Ta = 50 °C 0.8 20 0.4 RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 10 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 Pulse Width = 300 µ s 2% Duty Cycle 0.1 TJ = 25 °C PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD VOLTAGE, VOLTS .


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