LASER DIODE
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SLD1332‚u
670mW 500mW Laser Diode / Tentative
Description The SLD1332V is a high power visible lase...
Description
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SLD1332‚u
670mW 500mW Laser Diode / Tentative
Description The SLD1332V is a high power visible laser diode. This laser diode has high brightness 500mW which can be achieved by QW structure. Features High output power @ Recommended optical power output: Pop=500mW QW structure 9mm Can-type Package Application Measurement Structure AlGaInP quantum well structure laser diode Absolute Maximum Ratings(Tc=25Ž ) Optical power output Pomax Reverse voltage VR LD @ PD Operating temperature(Tc) Topr Storage temperature Tstg
0.55 2 15 -10 to +30 -40 to +85
W V V Ž Ž
Operating Lifetime MTTF 10,000H(effective value) at Po=0.5W,Tc=25Ž Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. Connection Diagram
COMMON
Pin configuration
3 PD 2
LD 1
2
1
3
1. LD Cathode 2. PD Anode 3. COMMON
Bottom View
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SLD1332V
Electrical and Optical Characteristics
Item Threshold current Operating current Operating voltage Wavelength Radiation angle Perpendicular Parallel Position Positional accuracy Angle ƒÆ/ Ûƃ / Symbol Ith Iop Vop λp Po 0.5W Po 0.5W Po 0.5W Po 0.5W Conditions Min. 66...
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