IXFB38N100Q2

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight 1.6 mm (0.063 in.) from case for 10 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 38 152 38 60 5.0 20 890 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications z 30...120/7.5...27 N/lb 10 g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1000 2.5 V z DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID =8 mA VGS = ± 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 25°C TJ = 125°C 5.5 V ± 200 nA 50 μA 3 mA 0.25 Ω z z PLUS 264...