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IRLI3705N

International Rectifier
Part Number IRLI3705N
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Nov 6, 2006
Detailed Description l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink t...
Datasheet PDF File IRLI3705N PDF File

IRLI3705N
IRLI3705N

Overview
l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The mould...


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